Improvement in electron-beam lithography throughput by exploiting relaxed patterning fidelity requirements with directed self-assembly

Hao-Yun YuChun-Hung LiuYu-Tian ShenHsuan-Ping LeeKuen-Yu TsaiKUEN-YU TSAI2018-09-102018-09-102014-02http://scholars.lib.ntu.edu.tw/handle/123456789/388666[SDGs]SDG4Improvement in electron-beam lithography throughput by exploiting relaxed patterning fidelity requirements with directed self-assemblyconference paper10.1117/12.20466152-s2.0-84902096249