Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface charge

Huang, C.-F.C.-F.HuangHsu, H.-C.H.-C.HsuChu, K.-W.K.-W.ChuLee, L.-H.L.-H.LeeTsai, M.-J.M.-J.TsaiLee, K.-Y.K.-Y.LeeZhao, F.F.ZhaoKUNG-YEN LEE2018-09-102018-09-102015http://www.scopus.com/inward/record.url?eid=2-s2.0-84921787893&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/390266Counter-doped JTE, an edge termination for HV SiC devices with increased tolerance to the surface chargejournal article10.1109/TED.2014.2361535