Applications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatment

C.-H. ChenM.-H. LiaoK.-R. LeeW.-S. HongK.-S. LiaoM.-C. HungW.-S. WangMING-HAN LIAO2021-12-302021-12-302012https://scholars.lib.ntu.edu.tw/handle/123456789/590728TaipeiApplications of positron annihilation, photoluminescence, and Raman spectroscopies to analyze the defect near the Si0.5Ge0.5/Si interface with super quality by diluted HF treatmentconference paper