Yuan-Chen LeeKai-Hsun LinKung-Yen Lee2024-08-232024-08-232021-11-169781665434485https://www.scopus.com/record/display.uri?eid=2-s2.0-85124892748&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/7203321.2kV-class 4H-SiC super junction (SJ) DMOSFET was designed and optimized in this work. Several P-pillar structures and dosage variation were used to target the charge balance condition in order to optimize breakdown voltage (BV) with low specific on-resistance $(R_{on,sp})$. Vertical electric field distribution of SJ DMOSFET performs a relatively uniform distribution compared with planer DMOSFET. Horizontal electric field distribution shows a peak value at the junction of N and P pillar,while the electric field distribution decline rate affects the final BV value effectively. In this study,we demonstrated the impact of adjusting the P-pillar width and scaling down the device on BV through a series of electric field analysis.false4H-SiC power MOSFETbreakdown voltagecharge balanceDMOSFETelectric field distributionsuper junctionconference paper10.1109/IFEEC53238.2021.96616562-s2.0-85124892748