Lin, R.-M.R.-M.LinTang, S.-F.S.-F.TangSI-CHEN LEECHIEH-HSIUNG KUANChen, G.-S.G.-S.ChenSun, T.-P.T.-P.SunWu, J.-C.J.-C.Wu2018-09-102018-09-10199700189383http://www.scopus.com/inward/record.url?eid=2-s2.0-0031076209&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332064An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated. The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 ω-cm2 at room temperature and as high as 1.3 M ω-cm2 at 77 K. At 77 K, the diode exhibits a breakdown voltage exceeding 13 V. When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 × 1010 cm-Hz1/2/W at room temperature and 8.1 × 1011 cm-Hz1/2/W at 77 K. To our knowledge, this is the best data for a room temperature infrared detector. © 1997 IEEE.[SDGs]SDG7Energy gap; Fermi level; Molecular beam epitaxy; Performance; Reflection high energy electron diffraction; Semiconducting indium compounds; Bandgap; Detectivity; Johnson noise; Leakage current; Room temperature; Photodiodesjournal article10.1109/16.557708