2013-01-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/680957摘要：近年來國際間許多團隊致力於使用化學氣相沉積法(CVD)製備出奈米矽晶鑲嵌於富矽碳化矽材料(Si-rich SixC1-x)，並且該碳化矽薄膜也被用於石墨/奈米碳管(Graphane/CNT)與矽基板中間之緩衝。於計劃的第一年至第三年間，我們欲使用電漿增強型化學氣相沉積法(PECVD)製備出奈米矽晶鑲嵌於碳化矽薄膜的發光二極體、光波導、以及光感測器(LED, transmitter, waveguide, and receiver)，並且將各個元件整合於單一晶片上，以達成光電整合迴路(Optoelectronic Interconnect Circuits)。透過改變反應氣體通量、機板溫度，以及電漿功率，我們可以去控制奈米矽晶的大小。首先，我們欲使用PECVD與熱退火處理方式調整奈米晶粒的大小，用以建構多彩、高輸出功率的奈米矽晶鑲嵌於碳化矽基 p-i-n 發光二極體元件。接下來，我們將設計個波段適用的碳化矽基光波導放大器。此外，透過改變奈米晶粒的大小，我們也可以獲得不同吸收譜線與光電轉換效率的碳化矽基 p-i-n 光偵測器。計劃的最終目標，就是將該奈米矽晶鑲嵌於碳化矽基的三項元件整合在一起，建構出電整合迴路。 在第三年到第五年，我們欲建構 p-i-n碳化矽 / p-i-n 非晶矽 / p-i-n 單晶矽 堆疊式太陽能電池，於該元件中，非晶矽與碳化矽薄膜是使用PECVD系統於無氫氣環境、極低電漿功率，以及極低溫度製成環境製備出來。該元件能夠將傳統單晶矽太陽能電池的吸收範圍延伸至紫外光區至紅外光區，已達到增加光電轉化效率的目的。此外，我們欲於元件的表面的透明導電膜進行奈米糙化處理，該奈米糙化處理能夠將全反射條件打破，進而降低太陽光於元見表面的反射量，達到增強光電轉換的目的。 <br> Abstract: Si-QDs embedded in Si-rich SixC1-x and the CVD synthesis of Graphane/CNT on metamorphic SiCx buffered Si substrate will be the distinguished researches internationally. In the first to the third year, we will integrate the Si–ncs embedded in Si-rich SixC1-x based LED, transmitter, waveguide, and receiver for Optoelectronic Interconnect Circuits by using the PECVD system. The different fabrication parameters are adjusted to control the Si-QD size, including the modulation of the gas mixture, the substrate temperature and the plasma power. At first, we propose to fabricate the high power mutli-colorful Si-QD embedded SixC1-x p-i-n LED by detuning the Si-QD size during PECVD deposition and annealing process. Then, we design the geometric structure of Si-QD Si-rich SixC1-x waveguide amplifier. In addition, the detecting wavelength and responsivity of the Si-QD embedded SixC1-x p-i-n photo-receiver are detuned by controlling the Si-QD size. Eventually, the SiC transmitter/waveguide/receiver for Optical Interconnect is integrated. In the third to the fifth year, we propose to fabricate a p-i-n a-SiC/p-i-n a-Si/p-i-n c-Si photovoltaic cell by combining the a-Si film and a-SiC film, which are synthesized by hydrogen-free, ultralow-plasma and low-temperature CVD system, the solar energy conversion is extended from UV to NIR region. Moreover, the crystalline-phase transformed and nano-roughened transparent conducting oxide with improved UV-VIS transmission is employed to improve the conversion efficiency.奈米矽晶富矽碳化矽電漿增強型化學氣相沉積法Silicon nanocrystalSi-rich SiCPlasma enhanced chemical vapor deposition