Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers

Cheng, Yung-ChenYung-ChenChengWu, Cheng-MingCheng-MingWuChen, Meng-KuoMeng-KuoChenYang, C. C.C. C.YangFeng, Zhe-ChuanZhe-ChuanFengLi, Gang AlanGang AlanLiYang, Jer-RenJer-RenYangRosenauer, AndreasAndreasRosenauerMa, Kung-JeKung-JeMa2009-03-112018-07-062009-03-112018-07-062004http://ntur.lib.ntu.edu.tw//handle/246246/144167https://www.scopus.com/inward/record.uri?eid=2-s2.0-3242672628&doi=10.1063%2f1.1767603&partnerID=40&md5=508821b4ace0740b9144dd315c31bce8application/pdf383687 bytesapplication/pdfen-US[SDGs]SDG7Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layersjournal article10.1063/1.17676032-s2.0-3242672628http://ntur.lib.ntu.edu.tw/bitstream/246246/144167/1/03.pdf