Enhancement of temperature sensitivity for metal-oxide-semiconductor (MOS) tunneling temperature sensors by utilizing hafnium oxide (HfO 2) film added on silicon dioxide (SiO 2)

Wang, T.-M.T.-M.WangChang, C.-H.C.-H.ChangHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102006http://www.scopus.com/inward/record.url?eid=2-s2.0-33845659567&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/321873Enhancement of temperature sensitivity for metal-oxide-semiconductor (MOS) tunneling temperature sensors by utilizing hafnium oxide (HfO 2) film added on silicon dioxide (SiO 2)journal article10.1109/JSEN.2006.884424