The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate scheme

Liao, M.-H.M.-H.LiaoHuang, S.C.S.C.HuangMING-HAN LIAO2020-01-132020-01-132015https://scholars.lib.ntu.edu.tw/handle/123456789/447955The demonstration of promising Ge n-type multi-gate-field-effect transistors with the magnetic FePt metal gate schemejournal article10.1063/1.49300782-s2.0-84940829725https://www.scopus.com/inward/record.uri?eid=2-s2.0-84940829725&doi=10.1063%2f1.4930078&partnerID=40&md5=2cbffa83a29d3dc4d00d2ea38a8b17b5