JENN-GWO HWU2018-09-102018-09-102004http://www.scopus.com/inward/record.url?eid=2-https://www.scopus.com/inward/record.uri?eid=2-s2.0-0142216375&doi=10.1016%2fS0038-1101%2803%2900257-0&partnerID=40&md5=c99f15f41c24edc5b2bdaeeed7ea069ahttp://scholars.lib.ntu.edu.tw/handle/123456789/307549Ultra-thin gate oxides with thickness smaller than 3 nm were prepared by anodic oxidation (anodization) in deionized water under direct-current biasing superimposed with alternating-current signal (DAC-ANO). It is experimentally observed that the DAC-ANO oxides after suitable high temperature annealing have better electrical characteristics than conventional rapid thermal oxides (RTO). Other advantages of DAC-ANO oxides include lower leakage current, higher time-zero dielectric breakdown and time-dependent dielectric breakdown endurance, and less stress-induced leakage current. The charge trapping behavior under high field stress is less significant in DAC-ANO oxides than in RTO ones. The improved reliability of DAC-ANO oxides can be explained by the nature of AC switching effect. DAC-ANO oxide is a potential candidate in the application of ultra-thin gate oxide to deep sub-micron devices. © 2003 Elsevier Ltd. All rights reserved.Anodic oxidation; SILC; TDDB; TZDB; Ultra-thin gate oxideAnodic oxidation; Leakage currents; Silica; Switching; Charge trapping; MOSFET devicesjournal article10.1016/S0038-1101(03)00257-02-s2.0-0142216375