Liou, Ting JuiTing JuiLiouTsai, Chun PuChun PuTsaiChen, Ting YiTing YiChenWEI-CHANG LI2023-04-072023-04-072023-01-01978166549308610846999https://scholars.lib.ntu.edu.tw/handle/123456789/630045This work demonstrates a performance enhancement technique for both reliability and sensitivity using electroless plated contact for CMOS-MEMS based resoswitches with a factor of ∼7× increase in cycle counts, from ∼3×106 to 2.2×107 cycles, and shows integrity of the output voltage waveform - the initial and last cycles of output signal are almost the same, indicating an enhancement in the lifetime and signal stability of resoswitches. In addition, electroless nickel plating achieves the sub-micro gap spacing 0.1 μm and 3× decrease in the signal level, from 900 mVpp to 300 mVpp required for launching hot switching. In particular, applying electroless nickel plating on released CMOS-MEMS folded-beam comb-driven resoswitches to replace the two only contact materials of aluminum and tungsten available in standard CMOS yields not only a much reliable contact but also a reduced gap spacing in the same time.CMOS-MEMS resoswitches | contact materials | Electroless nickel plating | reliability enhancementTowards a Better CMOS-MEMS Resoswitch Using Electroless Plating for Contact Engineeringconference paper10.1109/MEMS49605.2023.100525752-s2.0-85149808245https://api.elsevier.com/content/abstract/scopus_id/85149808245