Optoelectronic properties of p-type NiO films deposited by direct current magnetron sputtering versus high power impulse magnetron sputtering

Chen, S.-C.S.-C.ChenKuo, T.-Y.T.-Y.KuoLin, H.-C.H.-C.LinChen, R.-Z.R.-Z.ChenSun, H.H.SunHSIN-CHIH LIN2021-02-042021-02-042020https://www.scopus.com/inward/record.url?eid=2-s2.0-85077507454&partnerID=40&md5=9f63bf53544a097f39a934834210c6b3https://scholars.lib.ntu.edu.tw/handle/123456789/546675Optoelectronic properties of p-type NiO films deposited by direct current magnetron sputtering versus high power impulse magnetron sputteringjournal article10.1016/j.apsusc.2019.1451062-s2.0-85077507454WOS:000516818700049