Yang, Ming-CheMing-CheYangShieh, JiannJiannShiehKo, Tsung-ShineTsung-ShineKoChen, Hsuen-LiHsuen-LiChenChu, Tieh-ChiTieh-ChiChu2008-12-312018-06-282008-12-312018-06-28200500214922http://ntur.lib.ntu.edu.tw//handle/246246/95616https://www.scopus.com/inward/record.uri?eid=2-s2.0-31844432587&doi=10.1143%2fJJAP.44.5791&partnerID=40&md5=d08bd2ae496074306d545d4a179796cdSilicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF4, SF 6, and SiCl4 gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism. © 2005 The Japan Society of Applied Physics.application/pdf172572 bytesapplication/pdfen-USGermanium nanostructure; Gold nanoparticle; Hydrogen plasma etching; ICPCVD; Silicon nanowireCatalysts; Dry etching; Germanium; Gold; Plasmas; Silicon; Germanium nanostructures; Gold nanoparticles; Hydrogen plasma etching; Silicon nanowires; Nanostructured materialsjournal article10.1143/JJAP.44.57912-s2.0-31844432587http://ntur.lib.ntu.edu.tw/bitstream/246246/95616/1/16.pdf