National Taiwan University Dept Elect EngnTu, Hsing-YuanHsing-YuanTuLin, Yo-ShengYo-ShengLinChen, Ping-YuPing-YuChenLu, Shey-ShiShey-ShiLuPan, Hsuan-YuHsuan-YuPan2006-11-142018-07-062006-11-142018-07-062002-10http://ntur.lib.ntu.edu.tw//handle/246246/200611150121219The kink phenomenon in scattering parameter of InGaP–GaAs heterojunction bipolar transistors (HBTs) was explained quantitatively for the first time. Our results show that the output impedance of InGaP–GaAs HBTs can be represented by a simple series resistance–capacitance ( – ) circuit at low frequencies and a simple parallel – circuit at high frequencies very accurately because of the high output resistance of HBTs. The behavior of of HBTs is in contrast with that of field effect transistors (FETs), where the smaller drain–source output resistance obscures the ambivalent characteristics.application/pdf236667 bytesapplication/pdfzh-TWHBTInGaPkink phenomenonscattering parameterjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121219/1/8105.pdf