Kuo, W.-M.L.W.-M.L.KuoCressler, J.D.J.D.CresslerJoseph, A.J.A.J.JosephYI-JAN EMERY CHEN2020-06-112020-06-11200513698001https://scholars.lib.ntu.edu.tw/handle/123456789/501224https://www.scopus.com/inward/record.uri?eid=2-s2.0-13244265844&doi=10.1016%2fj.mssp.2004.09.050&partnerID=40&md5=e6b05a69488580ac5bd1aa1df3bf07fdA 21 GHz inductorless differential quadrature ring oscillator suitable for use in clock and data recovery circuits in optical network receivers is presented. Implemented using a commercially available 0.18 μm 120 GHz SiGe HBT technology, the circuit consists of only 22 SiGe HBTs and 4 resistors, and occupies an active area of less than 120×150 μm2. The circuit operates on a -3.0 V power supply and dissipates at most 152 mW of power. The oscillation frequency is tunable from 18.33 to 21.19 GHz while the output power varies from -13.5 to -9.0 dBm. A phase noise of -83.33 dBc/Hz at 1 MHz offset from the carrier frequency of 21.19 GHz is achieved. This results in an oscillator figure-of-merit of -148.03, which is comparable to other ring oscillators published in literature operating in similar frequency range. © 2004 Elsevier Ltd. All rights reserved.Differential; Heterojunction bipolar transistor; Quadrature; Ring oscillator; SiGe HBT; Silicon-germaniumAcoustic noise; Capacitors; Electric inductors; Electric power systems; Frequencies; Metallizing; MIM devices; Oscillations; Resistors; Semiconducting germanium; Semiconducting silicon; Differential quadrature; Oscillation frequency; Ring oscillator; SiGe HBT; Silicon-germanium; Heterojunction bipolar transistorsconference paper10.1016/j.mssp.2004.09.0502-s2.0-13244265844https://www.scopus.com/inward/record.uri?eid=2-s2.0-13244265844&doi=10.1016%2fj.mssp.2004.09.050&partnerID=40&md5=e6b05a69488580ac5bd1aa1df3bf07fd