Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensors

Wang, C.-Y.C.-Y.WangHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-76549115571&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/347702Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensorsconference paper10.1149/1.3206635