Chen, J.Z.J.Z.ChenHuang, C.-P.C.-P.HuangTseng, W.-H.W.-H.TsengCheng, I.-C.I.-C.ChengWu, C.-I.C.-I.WuI-CHUN CHENGJIAN-ZHANG CHENCHIH-I WU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-80051798337&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/364960We use the third harmonics of Nd:YAG laser (λ = 355 nm) for simultaneous precursor conversion and dopant activation on sol-gel ITO thin films at a laser fluence range of 700-1000 mJ/cm 2 . A minimum resistivity of 5.37 × 10 -2 Ω-cm with a corresponding carrier concentration of 6 × 10 19 cm -3 is achieved at laser irradiation fluence of 900 mJ/cm 2 . X-ray photoelectron analysis reveals that extremely high tin concentration of 19.4 at.% and above is presented in the laser-cured ITO thin films compared with 8.7 at.% in the 500 °C thermally cured counterpart. These excess tin-ions form complex defects, which contribute no free carriers but act as scattering centers, causing inferior electrical properties of the laser-cured films in comparison with the thermally cured ones. © 2011 Elsevier B.V. All rights reserved.[SDGs]SDG7journal article10.1016/j.apsusc.2011.06.1352-s2.0-80051798337WOS:000293883400058