Chen, T. C.T. C.ChenLai, W. Z.W. Z.LaiLiang, C. Y.C. Y.LiangMIIN-JANG CHENLee, L. S.L. S.LeeCHEE-WEE LIU2009-03-252018-07-062009-03-252018-07-06200400218979http://ntur.lib.ntu.edu.tw//handle/246246/148202https://www.scopus.com/inward/record.uri?eid=2-s2.0-2942662073&doi=10.1063%2f1.1695604&partnerID=40&md5=206c0a4f51f969110ed45b9e711d445eThe light emission from Al/HfO2-Si tunneling diodes were analyzed. The value of external quantum efficiency for light emission at room temperature from the metal-insulator-silicon light-emitting diode (MIS LED) was found to be 2.0×10-6, while 0.5×10-6 for the metal-oxide-silicon LED (MOS LED). It was observed that the light emission had an enhanced intensity of the band edge electron-hole plasma recombination. It was also observed that the SiO2 had a continuous current excitation, and thus the device temperature was higher than the HfO2 device, and also yielded a broad line shape at higher energy.application/pdf131868 bytesapplication/pdfen-US[SDGs]SDG7Current density; Electric field effects; Electroluminescence; Electron tunneling; Hafnium compounds; Light emission; Light emitting diodes; MOS devices; Permittivity; Phonons; Quantum efficiency; Semiconducting silicon; Thermooxidation; Transmission electron microscopy; Electron-hole plasma emission; Metal-insulator-silicon light-emitting diode (MIS LED); Radiative recombination; Rapid thermal oxidation (RTO); Tunnel diodesjournal article10.1063/1.16956042-s2.0-2942662073http://ntur.lib.ntu.edu.tw/bitstream/246246/148202/1/41.pdf