Ercan, E.E.ErcanLin, Y.-C.Y.-C.LinChen, C.-K.C.-K.ChenFang, Y.-K.Y.-K.FangYang, W.-C.W.-C.YangYang, Y.-F.Y.-F.YangWEN-CHANG CHEN2022-03-222022-03-22202226424150https://www.scopus.com/inward/record.uri?eid=2-s2.0-85112676346&doi=10.1002%2fpol.20210393&partnerID=40&md5=217ab9be8eea294c5e1cfac0304ed2f4https://scholars.lib.ntu.edu.tw/handle/123456789/598263Photonic field-effect transistor (FET) memory devices offer unique advantages owing to their solution processability, low cost production, and their lightweight and structural flexibility. Despite the plethora of research demonstrated the photon based programming process, limited reports are available for photoinduced recovery mechanism in such devices. To investigate the influence of polymer electret design on photonic memory performance, poly(9,9-dioctylfluorene) (PFO)–block–poly (vinylphenyl oxadiazole) (POXD) conjugated block copolymers were employed to a photonic FET memory with n-type semiconducting channel. The studied device exhibited bistable ON/OFF current states after electrical programming and photoinduced recovery (erasing) processes. The device operating mechanism was elaborated by comparing the device performance with respective electrets of PFO-b-POXD and PFO-b-polystyrene (PS) and PFO homopolymer. We found that PFO-b-POXD can efficiently generate photoexciton under UV illumination to neutralize the trapped hole, and assuage the hole trapping propensity of PFO segment, simultaneously. By optimizing the POXD content in the block copolymer, a decent memory ratio (ION/IOFF) of ~105 was achieved after 104 s, indicating its superior long-term stability and data discernibility. This research shows the judicious strategy to design polymer electret for photonic memory, and it opens up the possibility of developing photonic memory, human perception and futuristic communication systems using simple, convenient and reliable optoelectronic technique. ? 2021 Wiley Periodicals LLC.Block copolymersConjugated polymersElectretsField effect transistorsRecoveryConjugated block copolymersLong term stabilityPhotonic transistorsPoly(9 ,9-dioctylfluorene)Programming processRecovery mechanismsSolution processabilityStructural flexibilitiesPhotonic devicesjournal article10.1002/pol.202103932-s2.0-85112676346