Evolution of resistive switching mechanism through H <inf>2</inf> O <inf>2</inf> sensing by using TaO <inf>x</inf> -based material in W/Al <inf>2</inf> O <inf>3</inf> /TaO <inf>x</inf> /TiN structure

Chakrabarti, S.S.ChakrabartiPanja, R.R.PanjaRoy, S.S.RoyRoy, A.A.RoySamanta, S.S.SamantaDutta, M.M.DuttaGinnaram, S.S.GinnaramMaikap, S.S.MaikapCheng, H.-M.H.-M.ChengTsai, L.-N.L.-N.TsaiChang, Y.-L.Y.-L.ChangMahapatra, R.R.MahapatraJana, D.D.JanaQiu, J.-T.J.-T.QiuYang, J.-R.J.-R.YangJER-REN YANG2020-05-122020-05-122018https://scholars.lib.ntu.edu.tw/handle/123456789/491510Evolution of resistive switching mechanism through H <inf>2</inf> O <inf>2</inf> sensing by using TaO <inf>x</inf> -based material in W/Al <inf>2</inf> O <inf>3</inf> /TaO <inf>x</inf> /TiN structurejournal article10.1016/j.apsusc.2017.10.0722-s2.0-85031759466https://www.scopus.com/inward/record.uri?eid=2-s2.0-85031759466&doi=10.1016%2fj.apsusc.2017.10.072&partnerID=40&md5=5783d5171f6b5ba3a18d80f8fda0e180