Wang BWang ZJAMES-B KUO2021-09-022021-09-02201821686734https://www.scopus.com/inward/record.uri?eid=2-s2.0-85049107986&doi=10.1109%2fJEDS.2018.2831278&partnerID=40&md5=1f1fb793c4fce4860c67083de2098524https://scholars.lib.ntu.edu.tw/handle/123456789/580944An SOI LDMOS device with improved ruggedness under unclamped inductive switching (UIS) is described based on the substrate-dissipating (SD) mechanism. The key feature of this connect the N-drift region to the P-substrate under the source, which is designed to achieve an avalanche breakdown point at the edge of the P-island instead of near the gate contact. Thus, the avalanche current is shortened to the substrate contact through the P-island and the P-substrate, avoiding the avalanche current to pass through the N+ source/P-well junction and thus suppressing the activation of the parasitic bipolar transistor with a relaxed self-heating effect especially in the P-well region. As verified by the Medici device simulation results, the SD mechanism of the device under the UIS condition, may endure a remarkably higher avalanche current as compared with the conventional SOI LDMOS device. ? 2013 IEEE.Bipolar transistors; Doping (additives); Immune system; MOS devices; Semiconductor doping; Switches; Waveguide junctions; Avalanche breakdown; Avalanche currents; Parasitic BJT; Self-heating; SOI LDMOS; Unclamped inductive switching; Substratesjournal article10.1109/JEDS.2018.28312782-s2.0-85049107986