Luo Y.JSanyal ITzeng W.-CHo Y.-LChang Y.-CHsu C.-CChyi J.-ICHAO-HSIN WU2021-09-022021-09-022020https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102238314&doi=10.1109%2fWiPDAAsia49671.2020.9360271&partnerID=40&md5=e41aad05deedd3163d0c794960014291https://scholars.lib.ntu.edu.tw/handle/123456789/580567Since the communication techniques for 5G developed recent years, GaN-based HEMTs have been very promising candidates for high-speed and high-power electronic applications. Due to the intrinsic properties such as breakdown voltage, electron mobility and electron concentration compared to Si, power capability and switching speed can be improved easily by introducing GaN HEMTs into MMICs. But for conventional AlGaN/GaN HEMT, reducing the thickness of barrier (tbarrier) to prevent short channel effect will cause electric properties degrade [1], such as carrier concentration (Ns) and mobility [2]. Therefore, in this work, we replace AlGaN with In0.17Al0.83N, which can be scaled below to 10nm without decreasing Ns. Also, growing a thin GaN cap layer to prevent barrier from oxidation and fabricating T-shaped gate to improving high frequency characteristics are done ? 2020 IEEE.5G mobile communication systems; Aluminum gallium nitride; Carrier concentration; Electron mobility; Energy gap; Gallium nitride; Hall mobility; High electron mobility transistors; Hole mobility; III-V semiconductors; Power HEMT; Semiconductor alloys; Silicon compounds; Communication techniques; Electron concentration; High electron mobility; High frequency characteristics; High power electronic applications; Intrinsic property; Power capability; Short-channel effect; Wide band gap semiconductors[SDGs]SDG7conference paper10.1109/WiPDAAsia49671.2020.93602712-s2.0-85102238314