Feng, M.M.FengWu, C.-H.C.-H.WuWu, M.K.M.K.WuWu, C.-H.C.-H.WuHolonyak, N.N.HolonyakCHAO-HSIN WU2020-06-292020-06-292017https://scholars.lib.ntu.edu.tw/handle/123456789/505916Optical resonance in a semiconductor laser is a major limitation in high speed data communications, resulting in bit error rate degradation and requiring additional power consuming error-correction circuits to counter these effects. In this work, we report the microwave bandwidth measurement of a vertical cavity transistor laser with an oxide-confined aperture of 4.7 × 5.4 μm2 and demonstrate a 3 dB bandwidth of 11 GHz resonance-free optical response via base-current or collector-voltage modulation. The emission spectra exhibit single-mode operation around 970 nm with a narrow linewidth of Δλ ∼ 0.23 Å (cavity Q of 42 216). The resonance-free optical response is explained by the absence of carrier "accumulating" due to the fast base electron-hole recombination lifetimes and a gradient in the minority carrier charge in the transistor active mode.[SDGs]SDG7journal article10.1063/1.50041332-s2.0-85029926633https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029926633&doi=10.1063%2f1.5004133&partnerID=40&md5=781ae50222089efe7883c16bfcab6cae