矽基光電元件

2008-08-012024-05-17https://scholars.lib.ntu.edu.tw/handle/123456789/695674摘要：本計劃將分別探討兩個部份。第一部份是研究矽微米球的回音廊模共振模態，此一結構可以達到非常高的品質因數，進一步製備出高效率的感測器矽光電元件。第二部份是研究氧化鋅奈米粒子與有機電子/電洞傳輸材料結合，製作出單層氧化鋅奈米粒子的三明治結構，探討其電激發光性質以應用在矽基發光元件。首先分析矽球形共振腔結構的特性。矽微米球容易整合到以矽為基礎的奈米電子積體電路中。矽的折射係數遠大於氧化矽材，在界面上折射率的差異大，全反射角度也大，因此矽微米球的尺寸會遠小於氧化矽材微米球，未來小尺寸高密 度的光電元件需求下，矽微米球更適合整合到當中。我們將分析矽微米球的共振模以及對應的品質因數。其次是研究氧化鋅的光電特性；氧化鋅是個有潛力的紫外-藍光材料，發光能隙在3.3 eV 而且有很大的束縛能，此性質讓它在室溫下操作下依然有很好的穩定性，未來將整合應用在矽基光電元件上，以期製備出高效 率的矽基材之電激發光元件。<br> Abstract: This proposal is divided into two parts. First, we investigate the whispering-gallery modes of silicon microspheres. The spherical cavities possess the WGMs and this effect causes ultra-high quality factor. The high Q-factor has been found useful in ultra-low threshold pump power of lasers, bio-sensing, and so on. Secondly, we report electroluminescence from ZnO nanoparticle-based devices prepared by the dry-coating method. With dry-coating process, the structure of the ZnO nanoparticle monolayer in the device can be achieved. In the beginning, the resonant characteristics of silicon micropheres are analyzed. The silicon-based microspheres can be fabricated on silicon wafers using the standard ULSI processing technology, which enables the mass production of such structures and monolithic integration with electronics. The refractive index of silicon is much more than that of silica, thus the difference in refractive index of silicon among the interface is large. This leads to a large angle of total reflection and it is suitable for silicon microspheres to integrate into the optoelectronics devices in the futrue. In this work, we theoretically analyze the sharp resonances and resonance shifts in very small silicon microspheres. Next, we analyze the optoelectronic properties of ZnO. Zinc oxide (ZnO) is a promising semiconductor with a wide direct band gap of 3.37 eV. Due to its large exciton binding energy (60 meV), the excitons in ZnO are thermally stable at room temperature, which is a significant advantage for ultraviolet (UV)-blue light-emitting devices. It is suitable to integrate with silicon-based optoelectronics devices, and it is potential to produce high-efficiency ZnO electroluminescence (EL) devices in silicon-based material.矽氧化鋅品質因&#63849回音&#63784模共振模態&#63756米&#63993子。Siliconzinc oxidequality factorwhispering-gallery modesnanoparticles。矽基光電元件