萬本儒2006-07-252018-06-282006-07-252018-06-282004http://ntur.lib.ntu.edu.tw//handle/246246/9376本研究期望從設計、製作新型的多重能隙半導體薄膜及應用兩極的光伏特系統，來進行太陽光水分解製氫程序。本研究選擇氧化鐵(Fe2O3)和矽(Si)為雙重能隙薄膜的材料，銦錫氧化物(ITO)為透光導電層。由於矽和ITO 的薄膜製備技術成熟，再加上Fe2O3 為n 型半導體材料，故製備p-Fe2O3 薄膜則成為本研究的關鍵。在p-Fe2O3 薄膜的製備上，本研究選擇用物理濺鍍法來獲得。本研究為三年期的計畫，由前期研究已發展出，利用Mg 原子的摻雜，可得到製備p-Fe2O3 濺鍍靶材的最佳處理條件。今年為計畫的第二年，為了獲得光電效率高的p-Fe2O3 薄膜，本研究以該p-Fe2O3 當濺鍍靶材，探討不同濺鍍條件對薄膜的影響。並且，建立一套光電量測系統，由XRD 、UV-Vis 、α-step 、EDS 和光/暗導電度比來鑑定薄膜性質。由研究結果可發現，電漿氣體組成是影響p-Fe2O3 薄膜性質的主因。當電漿氣體中Ar 濃度越大，p-Fe2O3 薄膜越易生成Fe3O4 ，使薄膜能隙值降低。因此，p-Fe2O3 薄膜的最佳製備條件為在O2 電漿下濺鍍約300nm 的膜厚，能隙值約1.8eV ，光/暗導電度比最高。未來本研究將以Si為摻雜物，製備n-Fe2O3 薄膜，再依序將p 型、n 型Fe2O3 和ITO 薄膜鍍在pn 接合的單晶矽薄膜上，期望得到應用在光分解水的Fe2O3/Si 雙重能隙薄膜。For the purpose of fabricating the multiple bandgap films for the production of hydrogen from photo-decomposition of water in this research, Fe2O3 and Si were chosen as the materials, and ITO was chosen as the transparent middle layer for ohmic contact. Due to the n-type intrinsic behavior of Fe2O3 and the maturity of the Si and ITO technology, the p-Fe2O3 film preparation was the key point of this research. The p-Fe2O3 film was fabricated by RF magnetron sputtering process. From our previous results, it was demonstrated that the p-Fe2O3 sputtering target can be made by Mg doping. During the research in this year, in order to fabricate a p-Fe2O3 film with a good photo-efficiency, the sputtering factors were investigated. The films were characterized by UV-Vis, X-ray diffraction, α-step , EDS and photo/dark ratio. The results were shown that the composition of the plasma gas was an important factor for the p-Fe2O3 film sputtering. The more Ar in the plasma gas, the smaller bandgap of the p-Fe2O3 film was obtained. It has been concluded that the p-Fe2O3 film with the highest photo/dark ratio and an optical bandgap (1.8eV) was made by sputtering under O2 plasma gas for the film thickness of about 300nm.application/pdf78126 bytesapplication/pdfzh-TW國立臺灣大學化學工程學系暨研究所光電水分解多重能隙氫氣氧化鐵薄膜multiple bandgapphotoelectrochemical water splittinghydrogenFe2O3thin film[SDGs]SDG7reporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/9376/1/922214E002009.pdf