Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source

Liu, C.-W.C.-W.LiuChen, S.-L.S.-L.ChenLay, J.-P.J.-P.LayLee, S.-C.S.-C.LeeCHEE-WEE LIUSI-CHEN LEEHAO-HSIUNG LIN2020-06-112020-06-111987https://scholars.lib.ntu.edu.tw/handle/123456789/500427Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane sourcejournal article10.1063/1.985792-s2.0-11744316186https://www.scopus.com/inward/record.uri?eid=2-s2.0-11744316186&doi=10.1063%2f1.98579&partnerID=40&md5=beb82bd15db08ec541dee41cb21ce55c