Liu, X.X.LiuLu, T.-M.T.-M.LuHarris, C.T.C.T.HarrisLu, F.-L.F.-L.LuLiu, C.-Y.C.-Y.LiuJIUN-YUN LICHEE-WEE LIUDu, Rui-RuiRui-RuiDu2021-05-052021-05-05202024699950https://www.scopus.com/inward/record.url?eid=2-s2.0-85079826418&partnerID=40&md5=95f9a9beacd46ff71badee98ee2d4032https://scholars.lib.ntu.edu.tw/handle/123456789/559059We investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=1/2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal Sxyd of v=1/2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field). © 2020 American Physical Society.Magnetic fields; Temperature distribution; Electron diffusion; Hole densities; Linear temperature dependence; Measurement configuration; Sweeping magnetic fields; Thermoelectric transport; Thermoelectric transport properties; Two dimensional hole system; Diffusionjournal article10.1103/PhysRevB.101.0753042-s2.0-85079826418WOS:000513211600005