Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique

Lin Y.-S.Huang K.-W.Lin H.-C.HSIN-CHIH LINMIIN-JANG CHEN2019-11-272019-11-27201700381098https://www.scopus.com/inward/record.uri?eid=2-s2.0-85018334595&doi=10.1016%2fj.ssc.2017.04.015&partnerID=40&md5=03c6f7bff2b3cf4cc0e1417e578cf183https://scholars.lib.ntu.edu.tw/handle/123456789/432411Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping techniquejournal article10.1016/j.ssc.2017.04.0152-s2.0-85018334595