JENN-GWO HWU2018-09-102018-09-101995https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029292367&doi=10.1016%2f0038-1101%2894%2900168-F&partnerID=40&md5=38fdafb45fd2f06fdd5f3b75c0679552http://scholars.lib.ntu.edu.tw/handle/123456789/314478Instead of oxygen, pure N2O gas was used as the reoxidizer for rapid thermal reoxidized nitrided oxide in this work. The performance of n-MOSFETs with this new gate dielectric is dramatically improved in both the radiation-hardness and channel-hot-carrier stress when compared with those with pure O2-grown and O2-reoxidized nitrided oxides. Higher mobility is observed for the n-MOSFETs with N2O-reoxidized nitrided oxides in both the high field and low field regions. These improvements are attributed to the additional nitridation effect during the N2O reoxidation process, which will incorporate more nitrogen at the SiO2/Si interface. © 1995.Annealing; Dielectric heating; Hot carriers; Interfaces (materials); Nitrides; Nitriding; Oxides; Performance; Radiation hardening; Reliability; Semiconducting silicon; Channel hot carrier stress; Nitridation effect; Nitrided gate oxides; Rapid thermal processing system; Reoxidation; MOSFET devicesjournal article10.1016/0038-1101(94)00168-F2-s2.0-0029292367