Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships

M. H.LiaoC.-C. LeeC.-P. HsiehP.-C. HuangS.-W. Cheng2019-03-112019-03-112016https://scholars.lib.ntu.edu.tw/handle/123456789/404527Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationshipsjournal article