Cheng, Y.-C.Y.-C.ChengLiao, C.-C.C.-C.LiaoFeng, S.-W.S.-W.FengCHIH-CHUNG YANGLin, Y.-S.Y.-S.LinKung-Jeng, M.M.Kung-JengChou, C.-C.C.-C.ChouLee, C.-M.C.-M.LeeChyi, J.-I.J.-I.Chyi2018-09-102018-09-10200100214922http://www.scopus.com/inward/record.url?eid=2-s2.0-0035301742&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/292603https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035301742&doi=10.1143%2fjjap.40.2143&partnerID=40&md5=39572fa483ed41a3b109d02996b450daMagnesium-doped p-type GaN has been activated by irradiation with photons of 532 nm wavelength from the second harmonic of a Q-switched neodymium-doped ytterbium aluminum garnet (Nd:YAG) laser. With appropriate laser fluence levels and irradiation pulse numbers, such a laser-induced activation process resulted in a hole concentration about the same as that obtained through the conventional thermal activation technique. Temperature measurement revealed that the laser-induced process is very unlikely to be thermal. It was speculated that the process might involve the photon-induced breaking of the H-Mg bonds.Laser-induced activation; Mg-doped GaN; P-type activation; Thermal activationActivation analysis; Laser beam effects; Magnesium printing plates; Photons; Q switched lasers; Second harmonic generation; Semiconductor doping; Temperature measurement; Thermal activation; Gallium nitridejournal article2-s2.0-0035301742