Huang J.-ZNi I.-CHsu Y.-HLi S.-WChan Y.-CYang S.-YLee M.-HShue S.-LChen M.-HCHIH-I WU2023-06-092023-06-0920222632959Xhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85129260077&doi=10.1088%2f2632-959X%2fac3388&partnerID=40&md5=e1bfd43195405332070ed8f8152fcbdahttps://scholars.lib.ntu.edu.tw/handle/123456789/632146A furnace-free inductively coupled plasma chemical vapor deposition (ICP-PECVD) system, which does not require sample heating, was used to grow graphene at a temperature below 300 °C. This studies have found that under low-temperature PECVD growth conditions, liquid precursors are more suitable for preparing low-temperature graphene precursors than gaseous precursors.​​​​ Hence, benzene is used as a carbon precursor to obtain a sheet resistance of approximately 1.24 kω sq-1. In this research, it was discovered that the carbon-hydrogen ratio of the precursor molecule is an important factor while using PECVD to grow graphene. This factor affects the quality of graphene and the sheet resistance value - when the carbon-hydrogen ratio for the precursor molecule is 1:1, graphene has the high quality and lowest sheet resistance; when it is less than 1:2, the graphene that cannot be deposited has the worst quality and sheet resistance. Furthermore, we found that methane, a precursor often used to deposit graphene, will etch graphene under low-temperature conditions, and that acetylene can be used as a precursor to deposit graphene. It was further proven that the carbon-hydrogen ratio of the precursor molecules in the PECVD process caused the reduction in the graphene temperature. © 2022 The Author(s). Published by IOP Publishing Ltd.carbon-to-hydrogen ratio; graphene; ICP-PECVD; liquid-based carbon precursors; low temperatureDeposits; Graphene; Hydrogen; Inductively coupled plasma; Low temperature effects; Molecules; Plasma CVD; Carbon precursors; Carbon-to-hydrogen ratio; High quality; Hydrogen ratio; Inductively coupled plasma chemical vapor deposition; Liquid-based carbon precursor; Lows-temperatures; Precursor molecules; Sample heating; Vapor deposition systems; Temperaturejournal article10.1088/2632-959X/ac33882-s2.0-85129260077