Wu, S.Y.S.Y.WuMINGHWEI HONGKortan, A.R.A.R.KortanKwo, J.J.KwoMannaerts, J.P.J.P.MannaertsLee, W.C.W.C.LeeHuang, Y.L.Y.L.Huang2019-12-272019-12-272005https://scholars.lib.ntu.edu.tw/handle/123456789/443459Single-crystal Al2 O3 films have been epitaxially grown on Si (111) substrates despite a lattice mismatch of more than 30%. The oxide was electron-beam evaporated from a high-purity sapphire source. The structural and morphological studies carried out by x-ray diffraction, x-ray reflectivity, atomic force microscopy, and transmission electron microscopy, with the initial epitaxial growth observed by in situ reflection high-energy electron diffraction show that the oxide films as thin as 3.8 nm have the cubic γ -phase with a very uniform thickness and a high structural perfection. The film surface is very smooth with a roughness of 0.12 nm and the oxideSi interface is atomically sharp. The γ- Al2 O3 films are well aligned with Si substrate with an orientation relationship of Si (111) Al2 O3 (222), Si [220] Al2 O3 [440]. © 2005 American Institute of Physics.[SDGs]SDG7journal article10.1063/1.20372052-s2.0-24644473769https://www.scopus.com/inward/record.uri?eid=2-s2.0-24644473769&doi=10.1063%2f1.2037205&partnerID=40&md5=eb3e737298b4eee93749b6102a5e1cc5