Enhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramids

Lin, Chun-JungChun-JungLinLin, Chi-KuanChi-KuanLinLinGongRu2009-03-252018-07-062009-03-252018-07-06200710944087http://www.scopus.com/inward/record.url?eid=2-s2.0-33847745009&partnerID=MN8TOARShttp://ntur.lib.ntu.edu.tw//handle/246246/148014http://ntur.lib.ntu.edu.tw/bitstream/246246/148014/1/08.pdfThe premier observation on the enhanced light emission from such a metal-SiOx-Si light emitting diode (MOSLED) with Si nano-pyramids at SiOx/Si interface is demonstrated at low biases. The Si nano-pyramids exhibits capability in providing the roughness of the SiOx/Si interface, and improving the Fowler-Nordheim (F-N) tunneling mechanism based carrier injection through the novel SiOx/nano-Si-pyramid/Si structure. HRTEM analysis reveals a precisely controllable size and concentration of the crystallized interfacial Si nano-pyramids at 10nm(height)×10nm(width) and within the range of 108-10 11 cm-2, respectively. With these Si nano-pyramids at a surface density of up to 1012/cm2, the F-N tunneling threshold can be reduce from 7 MV/cm to 1.4 MV/cm. The correlation between surface density of the interfacial Si nano-pyramids and the threshold F-N tunneling field has been elucidated. Such a turn-on reduction essentially provides a less damaged SiOx/Si interface as the required bias for the electroluminescence of the MOSLED is greatly decreased, which thus suppresses the generation of structural damage related radiant defects under a lower biased condition and leads to a more stable near-infrared electroluminescence with a narrowing linewidth and an operating lifetime lengthened to >3 hours. An output EL power of nearly 150 nW under a biased voltage of 75 V and current density of 32 mA/cm2 is reported for the first time. © 2007 Optical Society of America.application/pdf1446218 bytesapplication/pdfen-USCrystallization; Electroluminescence; Light emitting diodes; Molecular structure; Surface roughness; Fowler-Nordheim tunneling effect; Near-infrared electroluminescence; Si nano-pyramids; Nanocrystalline materialsEnhanced Fowler-Nordheim tunneling effect in nanocrystallite Si based LED with interfacial Si nano-pyramidsjournal article10.1364/OE.15.0025552-s2.0-33847745009http://ntur.lib.ntu.edu.tw/bitstream/246246/148014/1/08.pdf