Ma Shyh-YihJAMES-B KUO2023-06-092023-06-091994214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028546268&partnerID=40&md5=50ebd5adbc86cbac5c5756442a8432a3https://scholars.lib.ntu.edu.tw/handle/123456789/632463This paper reports a concise physical model considering energy transport and source resistance for deep submicron n-channel metal-oxide-semiconductor (NMOS) devices. As verified by the experimental data, the closed-form analytical model shows good accuracy in the IV characteristics.Electric fields; Electrons; Mathematical models; Temperature; Thermal conductivity; VLSI circuits; Carrier temperature; Deep submicron; Drift diffusion model; Electron current density; Energy balance equation; Energy transport; N-channel metal oxide semiconductor device; Source resistance; MOS devicesjournal article2-s2.0-0028546268