Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition

MINGHWEI HONGWan, H.W.H.W.WanLin, K.Y.K.Y.LinChang, Y.C.Y.C.ChangChen, M.H.M.H.ChenLin, Y.H.Y.H.LinLin, T.D.T.D.LinPi, T.W.T.W.PiKwo, J.J.Kwo2019-12-272019-12-272017https://scholars.lib.ntu.edu.tw/handle/123456789/443306Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-depositionjournal article10.1063/1.50036162-s2.0-85029757899https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029757899&doi=10.1063%2f1.5003616&partnerID=40&md5=8713c6c53f57576300ce637cdb00ad0f