Ma S.-YJAMES-B KUO2023-06-092023-06-091994214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028195295&doi=10.1143%2fJJAP.33.550&partnerID=40&md5=82c662e27fb60d36385fafc56f4e6a7chttps://scholars.lib.ntu.edu.tw/handle/123456789/632464This paper reports a concise analytical model for deep submicron n-channel metal-oxide-semiconductor (NMOS) devices taking energy transport into consideration. It was verified that the I-V characteristics obtained using the analytical model agree with those obtained experimentally. © 1994 Japanese Journal of Applied Physics. All rights reserved.Carrier temperature; Deep submicron; Energy transport; MOSCharge carriers; Electric properties; Electron energy levels; Semiconductor device models; Temperature; Deep submicron N channel MOS devices; Energy transport; MOS devicesjournal article10.1143/JJAP.33.5502-s2.0-0028195295