Hsu, B.-C.B.-C.HsuLin, C.-H.C.-H.LinKuo, P.-S.P.-S.KuoChang, S.T.S.T.ChangChen, P.S.P.S.ChenCHEE-WEE LIULu, J.-H.J.-H.LuCHIEH-HSIUNG KUAN2018-09-102018-09-10200407413106http://www.scopus.com/inward/record.url?eid=2-s2.0-3943092601&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/309153https://www.scopus.com/inward/record.uri?eid=2-s2.0-3943092601&doi=10.1109%2fLED.2004.831969&partnerID=40&md5=8ecb8145ffcfb96a3c8b8d899c801024The metal-insulator-semiconductor (MIS) Ge-Si quantum-dot infrared photodetectors (QDIPs) are successfully demonstrated. Using oxynitride as gate dielectric instead of oxide, the operating temperature reaches 140 and 200 K for 3-10 and 2-3 μm detection, respectively. From the photoluminescence spectrum, the quantum-dot structures are responsible for the 2-3 μm response with high operation temperature, and the wetting layer structures may be responsible for the 3-10 μm response. This novel MIS Ge/Si QDIP can increase the functionality of Si chip such as noncontact temperature sensing and is compatible with ultra-large scale integration technology. © 2004 IEEE.[SDGs]SDG7Dielectric materials; Emission spectroscopy; High temperature operations; Infrared detectors; Photoluminescence; Semiconducting germanium; Semiconducting silicon; Semiconductor device manufacture; Semiconductor device structures; Semiconductor quantum dots; Transmission electron microscopy; Gate dielectric; Oxynitride; Quantum dot infrared photodetectors; Quantum dot structures; Wetting layer structures; MIS devicesjournal article10.1109/LED.2004.8319692-s2.0-3943092601