Hole mobility enhancement of Si<inf>0.2</inf>Ge<inf>0.8</inf> quantum well channel on Si

CHEE-WEE LIUPeng, C.-Y.C.-Y.PengYuan, F.F.YuanYu, C.-Y.C.-Y.YuKuo, P.-S.P.-S.KuoLee, M.H.M.H.LeeMaikap, S.S.MaikapHsu, C.-H.C.-H.HsuCHEE-WEE LIU2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-33846096826&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332388Hole mobility enhancement of Si<inf>0.2</inf>Ge<inf>0.8</inf> quantum well channel on Sijournal article10.1063/1.2400394