2010-08-012024-05-15https://scholars.lib.ntu.edu.tw/handle/123456789/666173摘要：對主動元件(即IC等元件)而言, 其線寬及元件密度的發展一直接近有名的摩爾 定律(Moore’s Law)的預測, 但此定律的預測極限, 多年來一直被學術界探討, 至今 仍無定論. 但對陶瓷被動積層元件, 則一直沒有一個經驗定律被提出來, 對國內產 業界而言, 有極嚴重的影響, 他們因此無法作長期投資規劃, 只能一直跟著日本領 先業者的規格亦步亦趨, 導致國內業者將永遠無法超越日本業者, 對國內產業發 展極為不利. 而要找出陶瓷積層元件的層厚發展趨勢及極限的答案, 不是製程設備的花費 多高, 而是陶瓷晶粒在極小空間中(極小空間的定義是: 晶粒大小/層厚 <1)的燒結 及晶粒成長, 到底受到哪些因素的影響. 而本研究要探討的就是這個最基本的問 題. 在非常小的陶瓷空間中的燒結及晶粒成長行為, 並不同於塊材的燒結及晶粒 成長行為, 例如陶瓷薄膜中的晶粒成長行為就不同於塊材的燒結及晶粒成長行為, 雖然學術界對陶瓷薄膜的燒結及晶粒成長行為已有較完整的研究, 但陶瓷薄膜與 積層陶瓷元件內部的晶粒成長行為卻有極大差異. 尤其當我們在進行初步的研究 分析後, 發現與陶瓷薄膜的燒結及晶粒成長行為如下差異: 1. 積層陶瓷元件內部並不會發生不正常晶粒成長行為 2. 積層陶瓷元件內部似乎(仍待確認)無法觀察到preferred orientation 陶瓷材料間的整合是個極複雜卻又極為挑戰的研究, 而本研究目的為以兩年 的時間探討氧化鋅積層變阻器在不同燒結程度下的微結構變化, 並分析積層變阻 器的電性, 互相比對, 進而推演控制微結構的學理及工程依據. 選擇變阻器是因相較於電容, 電阻, 電感等其他陶瓷被動元件, 陶瓷變阻器對 微結構最為敏感, 研究變阻器可得到最多的微結構訊息, 預期完成之研究項目為: 1. 積層變阻器內電極間的微結構, 並與塊材比較, 建立陶瓷材料在極小 空間中之燒結及晶粒成長行為. 2. 積層變阻器的電性 3. 探討微結構控制的因子, 並進而推出控制微結構的依據. 4. 因Pd會與Bi2O3作用, 而AgPd較Pt在價格上具競爭力, 故本研究亦將探討 不同電極材料(Pt or AgPd)對積層試樣電極中的ZnO燒結及晶粒成長的影響<br> Abstract: For the line width in VLSI components, there is a Moore’s Law to predict their size reduction. However, for the layer thickness in ceramic multilayer components, there is no such Law existed. The drawback of the lacking of such Law is that it is not possible to make plan for the manufacturing of ceramic multilayer components. For the manufacturers in Taiwan, due to the lacking of such Law, they can only follow the steps of Japanese Manufacturers. The progress of the Taiwanese Manufacturers is therefore rather disappointing. The key to find out the Law for the layer thickness reduction is that the sintering and grain growth behaviour in a very limited space. To coin the term: very limited space is that the (grain size)/(layer thickness)<1. The objective of the present proposed work is to find out the sintering and grain growth behaviour in a very limited space. The sintering and grain growth behaviour in a very limited space are different from those in a bulk material. To take the thin film as an example, the sintering and grain growth in thin film is different from those in bulk specimen. After we have conducted a preliminary study on the ceramic multilayer specimens, the sintering and grain growth behaviour in ceramic multilayer specimen is different from those in ceramic thin film. For example, there is no abnormal grain and preferred orientation found in the ceramic multilayer specimen. In the present study, multilayer specimens composing of ZnO-based ceramics and inner electrodes (Pt or AgPd) will be prepared. We will spend two years on the present proposed study. The issues to be investigated are 1. The detailed characterization on the microstructure in multilayer specimen. The comparison between bulk and multilayer specimen will be made. The difference in microstructural characteristics will be defind. 2. The electrical properties of multilayer varistors. 3. Since the Pd would react with Bi2O3, the effect of Pt or AgPd inner electrodes on the microstructure and electrical properties of multilayer varistor. 4. A guidelines for the design of multilayer specimens will be proposed.積層燒結晶粒成長變阻器電性multilayersinteringgrain growthvaristorelectrical properties