Y.-S. WuP. SuVITA PI-HO HU2020-10-072020-10-0720111536125Xhttps://scholars.lib.ntu.edu.tw/handle/123456789/516610https://www.scopus.com/inward/record.uri?eid=2-s2.0-79952673737&doi=10.1109%2fTNANO.2010.2041010&partnerID=40&md5=cb4fea687a9b30bda447ac81bb45c9c8This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poissons equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (TBI) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined. © 2006 IEEE.Electrostatic integrity; germanium; germanium-on-nothing (GeON); Poissons equation; silicon-on-nothing (SON); ultrathin body (UTB)Analytical solutions; Buried insulators; Channel device; Channel length; Channel thickness; Electrostatic integrity; MOS-FET; MOSFETs; Poissons equation; Silicon-on-nothing; silicon-on-nothing (SON); Subthreshold swing; Ultra-thin-body; ultrathin body (UTB); Electrostatic devices; Electrostatics; MOSFET devices; Germaniumjournal article10.1109/tnano.2010.20410102-s2.0-79952673737