Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technology

Chang, W.H.W.H.ChangLee, C.H.C.H.LeeChang, Y.C.Y.C.ChangChang, P.P.ChangHuang, M.L.M.L.HuangLee, Y.J.Y.J.LeeHsu, C.-H.C.-H.HsuHong, J.M.J.M.HongTsai, C.C.C.C.TsaiKwo, J.R.J.R.KwoMINGHWEI HONG2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443391http://scholars.lib.ntu.edu.tw/handle/123456789/349394Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technologyjournal article10.1002/adma.2009021012-s2.0-73949139835https://www.scopus.com/inward/record.uri?eid=2-s2.0-73949139835&doi=10.1002%2fadma.200902101&partnerID=40&md5=7bc5c9e2963380504b47667379ae8495