Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition

CHEE-WEE LIULiu, C.W.C.W.LiuVenkataraman, V.V.VenkataramanCHEE-WEE LIU2018-09-102018-09-101997http://www.scopus.com/inward/record.url?eid=2-s2.0-0031153228&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332403Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor depositionjournal article