Capacitance Behavior of Nanometer FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Gate Tunneling Leakage Current

JAMES-B KUO2018-09-102018-09-102006-05http://scholars.lib.ntu.edu.tw/handle/123456789/325386[SDGs]SDG7Capacitance Behavior of Nanometer FD SOI CMOS Devices with HfO2 High-k Gate Dielectric Considering Gate Tunneling Leakage Currentconference paper10.1109/ICMEL.2006.16508962-s2.0-77956511058