Hsiang-Hui ChangShang-Ping ChenKuang-Wei ChengSHEN-IUAN LIU2018-09-102018-09-102002-08http://scholars.lib.ntu.edu.tw/handle/123456789/299159https://www.scopus.com/inward/record.uri?eid=2-s2.0-84966293681&doi=10.1109%2fAPASIC.2002.1031517&partnerID=40&md5=8652c6a7d6a9c80e612d7fb19f5dda0bIn this paper, a very low-voltage fourth-order bandpass delta-sigma modulator with a two-path architecture is presented. Using the modified switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without any voltage multiplier or bootstrapping switch. Realized in a 0.25 μm 1P5M standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 60.6 db and a dynamic range (DR) of 68 db in a 30 kHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm2. © 2002 IEEE.Bandpass amplifiers; Bandpass filters; CMOS integrated circuits; Delta sigma modulation; Operational amplifiers; Signal to noise ratio; Bandpass delta sigma modulators; Bandpass delta-sigma modulator; Distortion ratio; Signal bandwidth; Standard CMOS process; Supply voltages; Very low voltage; Voltage multipliers; Modulatorsconference paper10.1109/apasic.2002.10315172-s2.0-84966293681