Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides

Cheng, J.-Y.J.-Y.ChengLu, H.-T.H.-T.LuYang, C.-Y.C.-Y.YangHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102010http://www.scopus.com/inward/record.url?eid=2-s2.0-78751524776&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/356362Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxidesconference paper10.1109/ICSICT.2010.5667446