Low current cross-point memory using gadolinium-oxide switching material

Jana, D.D.JanaMaikap, S.S.MaikapChen, Y.Y.Y.Y.ChenYang, J.R.J.R.YangJER-REN YANG2020-05-122020-05-122014https://scholars.lib.ntu.edu.tw/handle/123456789/491557Low current cross-point memory using gadolinium-oxide switching materialconference paper10.1109/VLSI-TSA.2014.68396862-s2.0-84904171132https://www.scopus.com/inward/record.uri?eid=2-s2.0-84904171132&doi=10.1109%2fVLSI-TSA.2014.6839686&partnerID=40&md5=1d721c19179768ada2774bfa6e52e9c7