Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Chu, LKLKChuMerckling, CCMercklingAlian, AAAlianDekoster, JJDekosterKwo, JJKwoMINGHWEI HONGCaymax, MMCaymaxHeyns, MarcMarcHeyns2018-09-102018-09-102011http://scholars.lib.ntu.edu.tw/handle/123456789/364357Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectricsjournal article