Wu, Jyun YiJyun YiWuYEN-TING CHENLin, Ming HoMing HoLinWu, Tai BorTai BorWu2023-09-232023-09-232010-09-0107413106https://scholars.lib.ntu.edu.tw/handle/123456789/635682Charge storage characteristics of a hafnium oxynitride (HfON) charge-trapping layer prepared by atomic layer deposition in a metal-Al 2O3 HfON-SiO2-Si(MAHNOS) structure are investigated. We found that an ultrathin HfON (∼2.5 nm) embedded in MAHNOS has large memory window (∼7.5 V at Vg= ±15 V), sufficient erase speed (Δ VFB=4V at 16 V/1 ms), and satisfactory data retention. From the relation of erase transient current density (J) versus tunnel oxide e-field (ETUN), we also found that the erase mechanism of MAHNOS depends on electron detrapping from HfON to Si substrates. However, MAHNOS embedding with a thicker HfON shows a poor data retention due to the increase of crystallization of the trapping layer. © 2010 IEEE.Atomic layer deposition (ALD) | charge-trapping memory | hafnium oxynitride (HfON)journal article10.1109/LED.2010.20520902-s2.0-77956171624https://api.elsevier.com/content/abstract/scopus_id/77956171624