Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate Fringe

Lin, K.-W.K.-W.LinJENN-GWO HWU2021-05-052021-05-052020https://www.scopus.com/inward/record.url?eid=2-s2.0-85082866254&partnerID=40&md5=0b420ee3c494cefd919054f500500409https://scholars.lib.ntu.edu.tw/handle/123456789/559025[SDGs]SDG7Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate Fringejournal article10.1109/TED.2020.29749632-s2.0-85082866254WOS:000522559000071